Dependence of ZnO thickness on the electrical and optical properties of ZnO–Cu–ZnO multilayers for optoelectronic application

1Institute of Nano-Optoelectronics Research and Technology (INOR), School of Physics, Universiti Sains Malaysia, 11800 Penang, Malaysia 2Department of Physics, College Of Education, Al-Mustansiriya University, Baghdad, Iraq 3Department of Electrical Engineering, College Of Engineering, Al-Mustansiriya, Baghdad, Iraq Abstract: in this work ZnO/Cu/ZnO transparent conductive multilayer films are prepared ZnO using RF sputtering and Cu film using DC sputtering .The properties of the stacks structure are studied at different thickness of ZnO. The results show that the sheet resistance of the film stacks decreases with an increase of ZnO thickness and increased further with increase Fig. of merit. However, the transmittance of the structure increased with the decrease of ZnO thickness. Good transparent conductive film of sheet resistance was 84.29 ohms/sq while the transmittance of 53% was found at a 30/5/30. The performance of the multilayer film was evaluated using a Fig. of merit. The properties of these film stocks good for different applications in optoelectronic devices.